Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs

Hai Dang Trinh*, Yue Chin Lin, Edward Yi Chang, Hong Quan Nguyen, Shin Yuan Wang, Yuen Yee Wong, Binh Tinh Tran, Quang Ho Luc, Chi Lang Nguyen, Chang Fu Dee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300oC and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300oC the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages747-749
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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    Trinh, H. D., Lin, Y. C., Chang, E. Y., Nguyen, H. Q., Wang, S. Y., Wong, Y. Y., Tran, B. T., Luc, Q. H., Nguyen, C. L., & Dee, C. F. (2012). Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 747-749). [6417251] (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417251