Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

V. Desmaris*, J. Y. Shiu, N. Rorsman, H. Zirath, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications.

Original languageEnglish
Pages (from-to)632-636
Number of pages5
JournalSolid-State Electronics
Volume52
Issue number5
DOIs
StatePublished - 1 May 2008

Keywords

  • AlGaN/GaN HEMTs
  • Microwave FETs
  • Passivation
  • Transient analysis

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