Very high gm values of intrinsic doped epitaxial channel MOSFETs compared with those of bulk MOSFETs is experimentally confirmed for the first time. It is shown that preheating of the wafer before the UHV-CVD epitaxial growth is critically important to improve the crystal quality of the epitaxial layer and thus to obtain the high gm values. By adopting 700°C 5 minutes preheating, very high gm values of 630 mS/mm can be obtained for a 0.1 μm epitaxial channel n-MOSFET.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1995|
|Event||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 6 Jun 1995 → 8 Jun 1995