Influence of oxygen at epitaxial Si/Si substrate interface for 0.1μm epitaxial Si channel N-MOSFETs grown by UHV-CVD

T. Ohguro*, N. Sugiyama, K. Imai, K. Usuda, M. Saito, T. Yoshitomi, M. Ono, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

14 Scopus citations

Abstract

Very high gm values of intrinsic doped epitaxial channel MOSFETs compared with those of bulk MOSFETs is experimentally confirmed for the first time. It is shown that preheating of the wafer before the UHV-CVD epitaxial growth is critically important to improve the crystal quality of the epitaxial layer and thus to obtain the high gm values. By adopting 700°C 5 minutes preheating, very high gm values of 630 mS/mm can be obtained for a 0.1 μm epitaxial channel n-MOSFET.

Original languageEnglish
Pages (from-to)21-22
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 6 Jun 19958 Jun 1995

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