Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors

S. L. Siu*, W. S. Tam, H. Wong, C. W. Kok, K. Kakusima, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

This work studies the effects of number of gate finger on the DC subthreshold characteristics of multi-finger nanoscale MOS transistors. We found in not optimally-tempered nanoscale (gate length = 90 nm) MOS transistors that the significantly deteriorated subthreshold characteristics can be effectively improved by increasing the number of gate finger. This observation was explained with a modified subthreshold slope model based on voltage-doping transformation theory. Hence, the multi-finger structure does not only enhance the operation frequency, it also improves the subthreshold DC characteristics of the nanoscale MOS transistors.

Original languageEnglish
Pages (from-to)1606-1609
Number of pages4
JournalMicroelectronics Reliability
Volume52
Issue number8
DOIs
StatePublished - Aug 2012

Fingerprint Dive into the research topics of 'Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors'. Together they form a unique fingerprint.

  • Cite this