Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films

Wen Cheng Ke, Sheng Rui Jian*, I. Chen Chen, Jason S.C. Jang, Wei-Kuo Chen, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The effects of Mg-containing precursor flow rate on the characteristics of the Mg-doped GaN (GaN:Mg) were systematically studied in this study. The GaN:Mg films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with various flow rates of 25, 50, 75 and 100 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. The structural, electrical and nanomechanical properties of GaN:Mg thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall measurement and nanoindentation techniques, respectively. Results indicated that GaN:Mg films obtained with 25 sccm Cp2Mg possess the highest hole concentration of 3.1 × 10 17 cm -3. Moreover, the hardness and Young's modulus of GaN:Mg films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option showed positive dependence with increasing flow rate of Cp2Mg precursor, presumably due to the solution hardening effect of Mg-doping.

Original languageEnglish
Pages (from-to)796-801
Number of pages6
JournalMaterials Chemistry and Physics
Volume136
Issue number2-3
DOIs
StatePublished - 15 Oct 2012

Keywords

  • CVD
  • Hall effect
  • Nanoindentation
  • Thin films

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