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Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs
Shih Hung Chen*, Yueh Chin Lin, Dimitri Linten, Mirko Scholz, Geert Hellings, Edward Yi Chang, Guido Groeseneken
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review