Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs

Shih Hung Chen*, Yueh Chin Lin, Dimitri Linten, Mirko Scholz, Geert Hellings, Edward Yi Chang, Guido Groeseneken

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Compounds

Engineering & Materials Science