Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon

M. H. Juang*, F. S. Wan, H. W. Liu, K. L. Cheng, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p+n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF 2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation.

Original languageEnglish
Pages (from-to)2611-2614
Number of pages4
JournalJournal of Applied Physics
Volume71
Issue number6
DOIs
StatePublished - 1 Dec 1992

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