Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

Shih Yung Huang*, Ray-Hua Horng, Yu Ju Tsai, Po Rung Lin, Wei Kai Wang, Zhe Chuan Feng, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 1013, 1014 and 1015 ions cm-2) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 1014 ions cm-2 has been determined based on the current confinement performance. Under this condition, the 1014 ions cm-2 implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO 2-insulated RCLED one. Furthermore, the light emission pattern of the 1014 ions cm-2 implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.

Original languageEnglish
Article number035013
JournalSemiconductor Science and Technology
Volume25
Issue number3
DOIs
StatePublished - 23 Feb 2010

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