Influence of high substrate doping concentration on the hot- carrier and other characteristics of small-geometry CMOS transistors down to the 0.1 μm generation

M. Ono*, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The influence of high substrate doping on the characteristics of small-geometry n- and p-MOSFETs down to 0.1 μm has been investigated in detail. A practical limiting impurity concentration is found to exist at around 2approx.5 × 1018 cm-3 depending upon the application. In addition, unusual behaviors are found in the hot carrier characteristics in the region of high doping concentration.

Original languageEnglish
Pages (from-to)147-148
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1994
EventProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 7 Jun 19949 Jun 1994

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