The influence of high substrate doping on the characteristics of small-geometry n- and p-MOSFETs down to 0.1 μm has been investigated in detail. A practical limiting impurity concentration is found to exist at around 2approx.5 × 1018 cm-3 depending upon the application. In addition, unusual behaviors are found in the hot carrier characteristics in the region of high doping concentration.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1994|
|Event||Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 7 Jun 1994 → 9 Jun 1994