The influence of flash lamp Annealing (FLA) on Si/La 2O 3/n-Si structure and electrical characteristics of MOS devices have been studied. Positive shifts in flat-band voltage (V fb) were observed in devices with FLA followed by PMA. In addition, it was also observed that the FLA on Si/La 2O 3/n-Si structure is effective in suppressing the leakage current and interface trap charge density.
|Title of host publication||ULSI Process Integration 7|
|Number of pages||8|
|State||Published - 2011|
|Event||7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States|
Duration: 9 Oct 2011 → 14 Oct 2011
|Conference||7th Symposium on ULSI Process Integration - 220th ECS Meeting|
|Period||9/10/11 → 14/10/11|