Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La 2O 3Zn-Si structure

T. Kaneda*, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The influence of flash lamp Annealing (FLA) on Si/La 2O 3/n-Si structure and electrical characteristics of MOS devices have been studied. Positive shifts in flat-band voltage (V fb) were observed in devices with FLA followed by PMA. In addition, it was also observed that the FLA on Si/La 2O 3/n-Si structure is effective in suppressing the leakage current and interface trap charge density.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages157-164
Number of pages8
Edition7
DOIs
StatePublished - 2011
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 9 Oct 201114 Oct 2011

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period9/10/1114/10/11

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