Influence of electrode materials on CeOx based resistive switching

S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Resistance-change in insulator having ionic bond hardly obtain a large on and off resistance ratio. The influence of the metal electrodes on the resistive switching behavior of CeOx films has been investigated. Resistance switching properties using Ni, W and Ti as bottom electrode were caused by changing resistance of Ce oxide. However, resistance switching characteristics in samples with NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The fact that the set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field across the Ce oxide.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
Pages439-443
Number of pages5
Edition1
DOIs
StatePublished - 2012
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 18 Mar 201219 Mar 2012

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
CountryChina
CityShanghai
Period18/03/1219/03/12

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