Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs

M. Koyama, M. Cassé, R. Coquand, S. Barraud, G. Ghibaudo, H. Iwai, G. Reimbold

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Low-frequency noise (LFN) has been investigated in tri-gate (TG) Si nanowire (NW) FET. We have carefully measured and analyzed LFN for gate length down to 40 nm and cross-section width down to 10 nm. Drain current noise spectral density has been measured in linear region from weak to strong inversion of transistor operation. In particular, we have shown that the LFN behavior is in good agreement with carrier number fluctuations with correlated mobility fluctuations model in ultra-scaled TGNW FETs. We did not observe large contribution due to surface orientation difference between (100) top and (110) side-wall surfaces of TGNW. Moreover, the extracted oxide trap density is roughly the same for reference wide devices and TGNW FETs without significant impact of channel area downscaling and geometry.

Original languageEnglish
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages300-301
Number of pages2
ISBN (Print)9781479906499
DOIs
StatePublished - 2013
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: 16 Sep 201320 Sep 2013

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
CountryRomania
CityBucharest
Period16/09/1320/09/13

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