Influence of barrier growth temperature on the properties of InGaN/GaN quantum well

T. C. Wen*, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

In this study we investigate the effect of barrier growth temperature on the properties of InGaN/GaN multiple quantum wells. Double-crystal X-ray diffraction of MQW structures indicates that increasing the barrier growth temperature will reduce the well thickness. However, the photoluminescence peak wavelength shift is greater than the change of in the effective bandgap due to the reduction of well width. In addition to the reduction of well width, the determination of the origin of the significant blue shift in the photoluminescence peak wavelength should also take the strain effect into account.

Original languageEnglish
Pages (from-to)5302-5303
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number9 A
DOIs
StatePublished - 1 Sep 2001

Keywords

  • Barrier growth temperature
  • InGaN/GaN multiple quantum well
  • Strain

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