Inelastic electron dephasing times in CuxGe100-x alloys

Juhn-Jong Lin*, P. J. Sheng, Shih-ying Hsu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have studied the inelastic electron dephasing scattering times, τi, in disordered CuxGe100-x (35 ≤ x ≤ 60) alloys between 1 and 15 K. The values of τi -1 (approx. Tp), and especially the exponent of temperature p, are extracted from weak localization studies. We find that the value of p continuously decreases from approx. 3 to approx. 1 as x gradually decreases from 60 to 35. Our observation is understood in terms of a crossover of the inelastic electron dephasing in impure metals from e-ph scattering to critical e-e scattering as the disorder greatly increases and the system moves significantly toward the mobility edge.

Original languageEnglish
Pages (from-to)460-461
Number of pages2
JournalPhysica B: Condensed Matter
Volume280
Issue number1-4
DOIs
StatePublished - 11 May 2000
Event22nd International Conference on Low Temperature Physics (LT-22) - Helsinki, Finl
Duration: 4 Aug 199911 Aug 1999

Keywords

  • Dephasing times
  • Disordered metals
  • Electron-electron relaxation
  • Electron-phonon relaxation

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