Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology

Tzung Han Wu*, Chin-Chun Meng, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages2137-2140
Number of pages4
DOIs
StatePublished - 2 Oct 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • GaInP/GaAs HBT
  • Gilbert mixer
  • Micromixer
  • Wideband amplifier

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    Wu, T. H., Meng, C-C., & Huang, G. W. (2007). Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology. In 2007 IEEE MTT-S International Microwave Symposium Digest (pp. 2137-2140). [4264293] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2007.380347