Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Chang Hong Shen*, Jia Min Shieh, Jung Y. Huang, Hao-Chung Kuo, Chih Wei Hsu, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Fu Liang Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

Original languageEnglish
Article number033510
JournalApplied Physics Letters
Volume99
Issue number3
DOIs
StatePublished - 18 Jul 2011

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