Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy

Yue Han Wu, Yuen Yee Wong, Wei Chun Chen, Dung Sheng Tsai, Chun Yen Peng, Jr Sheng Tian, Li Chang, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.

Original languageEnglish
Article number015904
Pages (from-to)1-9
Number of pages9
JournalMaterials Research Express
Issue number1
StatePublished - 1 Mar 2014


  • Bowing parameter
  • InAlN
  • Indium-rich
  • Molecular beam epitaxy

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