Abstract
Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.
Original language | English |
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Article number | 015904 |
Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Materials Research Express |
Volume | 1 |
Issue number | 1 |
DOIs | |
State | Published - 1 Mar 2014 |
Keywords
- Bowing parameter
- InAlN
- Indium-rich
- Molecular beam epitaxy