Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy

Yue Han Wu; Yuen Yee Wong; Wei Chun Chen; Dung Sheng Tsai; Chun Yen Peng; Jr Sheng Tian; Li Chang; Edward Yi Chang

doi:10.1088/2053-1591/1/1/015904

Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy

Yue Han Wu, Yuen Yee Wong, Wei Chun Chen, Dung Sheng Tsai, Chun Yen Peng, Jr Sheng Tian, Li Chang, Edward Yi Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.

Original language	English
Article number	015904
Pages (from-to)	1-9
Number of pages	9
Journal	Materials Research Express
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/2053-1591/1/1/015904
State	Published - 1 Mar 2014

Keywords

Bowing parameter
InAlN
Indium-rich
Molecular beam epitaxy

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title = "Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy",

abstract = "Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.",

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AU - Wu, Yue Han

AU - Wong, Yuen Yee

AU - Chen, Wei Chun

AU - Tsai, Dung Sheng

AU - Peng, Chun Yen

AU - Tian, Jr Sheng

AU - Chang, Li

AU - Chang, Edward Yi

PY - 2014/3/1

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N2 - Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.

AB - Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.

KW - Bowing parameter

KW - InAlN

KW - Indium-rich

KW - Molecular beam epitaxy

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