Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

Wei-Kuo Chen*, J. F. Chen, Jyh-Cheng Chen, H. M. Kim, L. Anthony, C. R. Wie, P. L. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics & Astronomy