Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application

Yang Shun Fan*, Ching Hui Hsu, Li Feng Teng, Ming Chang Yu, Po-Tsun Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Pages575-577
Number of pages3
StatePublished - 1 Dec 2011
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: 7 Dec 20119 Dec 2011

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference18th International Display Workshops 2011, IDW 2011
CountryJapan
CityNagoya
Period7/12/119/12/11

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