InAs/In1-xGaxAs composite channel high electron mobility transistors for high speed applications

Edward Yi Chang, Chien I. Kuol, Heng-Tung Hsu, Chia Yuan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

80-nm InAs channel HEMTs with different lattice matched sub-channels, In0.53Ga0.47As and In0.7Ga0.3As, have been fabricated. The device with InAs/ In0.7Ga0.3As composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias VDS = 0.8 V. The high current gain cutoff frequency (ft) of 360 GHz and maximum oscillation frequency (fmax) of 380 GHz of the device with InAs/ In0.7Ga0.3As were obtained at VDS = 0.7 V in comparison to the InAs/In0.53Ga0.47 As channel HEMTs withft = 310 and fmax = 330 GHz. This is due to the high electron mobility and electron confinement in the InAs/ In0.7Ga0.3As channel. In addition, a low gate delay time 0.84 psec wasobtained at VDS = 0.5 V. The excellent performance of the InAs channel HEMTs demonstrated in this study shows great potential for high speed and very low power logic applications with the optimal design of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel.

Original languageEnglish
Title of host publication2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Pages198-201
Number of pages4
DOIs
StatePublished - 1 Dec 2008
Event2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands
Duration: 27 Oct 200831 Oct 2008

Publication series

Name2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Conference

Conference2008 European Microwave Integrated Circuit Conference, EuMIC 2008
CountryNetherlands
CityAmsterdam
Period27/10/0831/10/08

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