InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

S. Y. Wang*, S. C. Chen, Sheng-Di Lin, C. J. Lin, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3×108 cmHz1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.

Original languageEnglish
Pages (from-to)527-532
Number of pages6
JournalInfrared Physics and Technology
Volume44
Issue number5-6
DOIs
StatePublished - 21 Oct 2003

Keywords

  • Infrared detector
  • Intersubband
  • Quantum dot

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