InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

S. Y. Wang; S. C. Chen; Sheng-Di Lin; C. J. Lin; C. P. Lee

doi:10.1016/S1350-4495(03)00164-6

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

S. Y. Wang^*, S. C. Chen, Sheng-Di Lin, C. J. Lin, C. P. Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3×10⁸ cmHz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.

Original language	English
Pages (from-to)	527-532
Number of pages	6
Journal	Infrared Physics and Technology
Volume	44
Issue number	5-6
DOIs	https://doi.org/10.1016/S1350-4495(03)00164-6
State	Published - 21 Oct 2003

Keywords

Infrared detector
Intersubband
Quantum dot

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title = "InAs/GaAs quantum dot infrared photodetectors with different growth temperatures",

abstract = "InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3×108 cmHz1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.",

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AU - Wang, S. Y.

AU - Chen, S. C.

AU - Lin, Sheng-Di

AU - Lin, C. J.

AU - Lee, C. P.

PY - 2003/10/21

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N2 - InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3×108 cmHz1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.

AB - InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3×108 cmHz1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.

KW - Infrared detector

KW - Intersubband

KW - Quantum dot

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