InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature

Jenn-Fang Chen*, M. C. Wu, L. Yang, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.

Original languageEnglish
Pages (from-to)3040-3043
Number of pages4
JournalJournal of Applied Physics
Volume68
Issue number6
DOIs
StatePublished - 1 Dec 1990

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