InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang*, Chien I. Kuo, Heng-Tung Hsu, Che Yang Chiang, Yasuyuki Miyamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

Original languageEnglish
Article number034001
JournalApplied Physics Express
Volume6
Issue number3
DOIs
StatePublished - 1 Mar 2013

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