InAs quantum well transistors for high-speed low power applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An Indium Arsenic based quantum well field-effect transistors (QWFETs) with 80 nm gate length have been fabricated and evaluated for high speed and low DC power applications. The device exhibits high drain current density (1015 mA/mm), high transconductance (1920 mS/mm) and excellent RF performance (fT = 393 GHz), current gain cutoff frequency (fT), at an operating supply voltage of only 0.5 V. As for the gate delay time, the device shows a very low value of 0.54 psec at the VCC of 0.5 V. The InAs transistors demonstrate higher fT than silicon NMOS transistors while consuming smaller active power, indicating its great potential in next generation low power logic applications.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications
Pages75-82
Number of pages8
Edition3
DOIs
StatePublished - 17 Nov 2008
Event48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 18 May 200822 May 2008

Publication series

NameECS Transactions
Number3
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period18/05/0822/05/08

Fingerprint Dive into the research topics of 'InAs quantum well transistors for high-speed low power applications'. Together they form a unique fingerprint.

Cite this