An Indium Arsenic based quantum well field-effect transistors (QWFETs) with 80 nm gate length have been fabricated and evaluated for high speed and low DC power applications. The device exhibits high drain current density (1015 mA/mm), high transconductance (1920 mS/mm) and excellent RF performance (fT = 393 GHz), current gain cutoff frequency (fT), at an operating supply voltage of only 0.5 V. As for the gate delay time, the device shows a very low value of 0.54 psec at the VCC of 0.5 V. The InAs transistors demonstrate higher fT than silicon NMOS transistors while consuming smaller active power, indicating its great potential in next generation low power logic applications.
|Title of host publication||ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications|
|Number of pages||8|
|State||Published - 17 Nov 2008|
|Event||48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States|
Duration: 18 May 2008 → 22 May 2008
|Conference||48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting|
|Period||18/05/08 → 22/05/08|