InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application

Chien I. Kuo*, Heng-Tung Hsu, Edward Yi Chang, Yasuyuki Miyamoto, Wen Chung Tsern

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

An InAs/In0.7Ga0.3As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow-power-consumption low-noise application. The device has a very high transconductance of 1900 mS/mm at a drain voltage of 0.5 V. The saturated drain-source current of the device is 1066 mA/mm. A current gain cutoff frequency (fT) of 113 GHz and a maximum oscillation frequency (fmax) of 110 GHz were achieved at only drain bias voltage Vds = 0.1 V. The 0.08 × 40μm2 device demonstrated a minimum noise figure of 0.82 dB and a 14 dB associated gain at 17GHz with 1.14mW DC power consumption.

Original languageEnglish
Pages (from-to)7119-7121
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number9 PART 1
DOIs
StatePublished - 12 Sep 2008

Keywords

  • Current gain cutoff frequency (f)
  • Gate sinking
  • InAs/InGaAs
  • Ultralow power

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