InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al2O3 Gate Dielectric

Chia Yuan Chang*, Heng-Tung Hsu, Edward Yi Chang, Hai Dang Trinh, Yasuyuki Miyamoto

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

N-type metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) devices with an InAs-channel using atomic-layer-deposited (ALD) Al2O3 as a gate dielectric have been fabricated and characterized. The device performances of a set of scaled transistors with and without high- k gate dielectric Al2O3 have been compared to determine the optimum device structure for low power and high speed applications. The measurement results revealed that the high performance InAs-channel MOS-HEMTs with the ALD Al2O3 gate dielectric can be achieved if the structure is designed properly.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number12
DOIs
StatePublished - 22 Oct 2009

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