InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al2O3 gate dielectric

Chia Yuan Chang*, Edward Yi Chang, Wei Ching Huang, Yung Hsuan Su, Hai Dang Trinh, Heng-Tung Hsu, Yasuyuki Miyamoto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The performance of n-type metal-oxide-semiconductor HEMTs with an InAs-channel using atomic-layer-deposited Al2O3 as gate dielectric has been fabricated and evaluated. The device performances of a set of scaled transistors with different gate dielectric thicknesses of 3, 5 and 7 nm have been investigated to determine whether the architecture of Al 2O3 dielectric on InAs-channel HEMT can demonstrate good properties at low bias conditions for high-speed, high performance CMOS applications. The results indicate that the high-performance InAs-channel MOS-HEMTs with an ALD Al2O3 gate dielectric are promising candidates for advanced post-Si CMOS applications.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages87-92
Number of pages6
Edition6
DOIs
StatePublished - 1 Dec 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

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  • Cite this

    Chang, C. Y., Chang, E. Y., Huang, W. C., Su, Y. H., Trinh, H. D., Hsu, H-T., & Miyamoto, Y. (2009). InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al2O3 gate dielectric. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 87-92). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206609