InAs channel-based quantum well transistors for high-speed and low-voltage digital applications

Chien I. Kuo*, Heng-Tung Hsu, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High-performance indium arsenic (InAs) channel-based quantum well field-effect transistors (QWFETs) have been fabricated. A superior drain-source current density of 1015 mA/mm was achieved, with a high transconductance of 1900 mS/mm when the drain (VDS) was biased at 0.5 V. The current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) were extracted to be 393 and 260 GHz, respectively. A very low gate delay of 0.54 ps was also achieved at a 0.5 V drain bias. Compared to a silicon n-channel metal-oxide semiconductor field-effect transistor, the QWFETs exhibited a better radio-frequency performance with lower dc power consumption, which indicates the great potential for high-speed and low-voltage digital applications.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number7
DOIs
StatePublished - 26 May 2008

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