In situ X-ray diffraction study of the formation of TiSi2-C49 phase from Ti-Si multilayers on Si(100)

J. Sariel*, Haydn Chen, J. F. Jongste, S. Radelaar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The kinetics of the formation of a metastable TiSi2-C49 phase from amorphous Ti-Si multilayers grown on Si(100) substrate has been studied using a time-resolved X-ray diffraction technique at elevated temperatures ranging from 270 to 310 °C. A linear position-sensitive proportional counter (PSPC) was used to simultaneously collect the (131) and (150) Bragg peaks of the C49 phase. The kinetics data were analyzed using the Johnson-Mehl-Avrami (JMA) equation. The Avrami exponent was found to be 2.0 ± 0.1; the reaction rate constants follow a familiar Arrhenius-type behavior resulting in an activation energy of 2.5 eV. Comparison of our X-ray results with kinetics data obtained by other means is discussed.

Original languageEnglish
Pages (from-to)82-86
Number of pages5
JournalMaterials Chemistry & Physics
Volume40
Issue number2
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Titanium disilicide
  • X-ray diffraction

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