The x-ray diffraction technique described previously for measurement of growth kinetics of Pd2Si layers from their solid state reaction couples has been extended by the use of a one-dimensional position-sensitive detector (PSD). Additionally, the method has been extended to include measurement of the Pd layer. A detailed description of the experimental arrangement and analytical procedures is presented. The kinetics of epitaxial Pd2Si film growth were measured in situ over a range of 170-230°C. The PSD results, using data obtained from both the Pd 2Si and Pd layers, were able to confirm parabolic growth behavior for the Pd2Si film. The rate constants followed Arrhenius behavior and yielded an activation energy of E=1.32±0.07 eV with a prefactor k 0=0.49 cm2/s for the Pd2Si layer analysis and E=1.34±0.17 eV with a prefactor of 0.72 cm2/s for the Pd layer analysis. The PSD technique significantly enhances data collection and provides extended analytical capabilities. The method has the potential for measuring rate kinetics of other solid state reactions/transformations such as surface oxidation and alloy decomposition.