In situ x-ray diffraction measurement of Pd2Si transformation kinetics using a linear position-sensitive detector

T. W. Little*, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The x-ray diffraction technique described previously for measurement of growth kinetics of Pd2Si layers from their solid state reaction couples has been extended by the use of a one-dimensional position-sensitive detector (PSD). Additionally, the method has been extended to include measurement of the Pd layer. A detailed description of the experimental arrangement and analytical procedures is presented. The kinetics of epitaxial Pd2Si film growth were measured in situ over a range of 170-230°C. The PSD results, using data obtained from both the Pd 2Si and Pd layers, were able to confirm parabolic growth behavior for the Pd2Si film. The rate constants followed Arrhenius behavior and yielded an activation energy of E=1.32±0.07 eV with a prefactor k 0=0.49 cm2/s for the Pd2Si layer analysis and E=1.34±0.17 eV with a prefactor of 0.72 cm2/s for the Pd layer analysis. The PSD technique significantly enhances data collection and provides extended analytical capabilities. The method has the potential for measuring rate kinetics of other solid state reactions/transformations such as surface oxidation and alloy decomposition.

Original languageEnglish
Pages (from-to)1182-1190
Number of pages9
JournalJournal of Applied Physics
Issue number4
StatePublished - 1 Dec 1988

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