In-situ transmission electron microscopy study of nanotwinned copper under electromigration

Chien Neng Liao*, Kuan Chia Chen, Wen-Wei Wu, Lih Juann Chen, King-Ning Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. The stability of nanotwins under mechanical and electrical stressing becomes a critical consideration. Using a high resolution transmission electron microscopy, we observed that the {112} incoherent twin boundary (TB) and {111} coherent TB migrate at a rate of 0.06 - 0.09 nm/s in copper under an electric current density of 2x106 A/cm2. The TB migration is possibly associated with an atomic step moving along either {111} or {112} plane and the TB migration rate is mainly controlled by the incubation time of forming new atomic steps. To form such atomic steps, EM-induced diffusion at junctions where TBs meet a grain boundary or free surface may play an important role.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages254-255
Number of pages2
DOIs
StatePublished - 5 May 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period3/01/108/01/10

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