In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

Hsin Mei Lu, Chih Yang Huang, Guan Ming Huang, Kuo Chang Lu, Wen Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

Original languageEnglish
Pages (from-to)6-11
Number of pages6
JournalScripta Materialia
Volume193
DOIs
StatePublished - 1 Mar 2021

Keywords

  • Germanium segregation
  • In-situ TEM
  • Solid state diffusion
  • Superlattice
  • Titanium silicide

Fingerprint Dive into the research topics of 'In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice'. Together they form a unique fingerprint.

Cite this