In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

Yu Ting Huang, Shih Ying Yu, Cheng Lun Hsin, Chun Wei Huang, Chen Fang Kang, Fu Hsuan Chu, Jui Yuan Chen, Jung Chih Hu, Lien Tai Chen, Jr Hau He, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

Original languageEnglish
Pages (from-to)3955-3960
Number of pages6
JournalAnalytical Chemistry
Volume85
Issue number8
DOIs
StatePublished - 16 Apr 2013

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