In situ study of film stresses in metal silicides using absorption-edge-contour mapping

G. E. White*, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The stresses present in palladium- and nickel-silicide thin films during deposition and subsequent annealing processes have been monitored using the absorption-edge-contour mapping technique employing synchrotron radiation. A miniature fabrication chamber has been constructed for this purpose. The magnitude and the sense of the film stresses vary with the deposition condition and the annealing process. Film relaxation occurs during annealing so that a state of no stress can be reached at annealing temperature. The origins of fllm stresses as well as the changes of stress magnitudes are discussed.

Original languageEnglish
Pages (from-to)3317-3321
Number of pages5
JournalJournal of Applied Physics
Volume68
Issue number7
DOIs
StatePublished - 1 Dec 1990

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