In-situ studies and Monte Carlo simulation of electromigration-induced void evolution in dual in-laid Cu interconnect structures for several geometries

A. V. Vairagar*, M. A. Meyer, E. Zschech, W. Shao, S. G. Mhaisalkar, A. M. Gusak, King-Ning Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

As electromigration failure continues to be one of the most severe reliability issues in Cu interconnects, understanding the mechanism of electromigration-induced void evolution in dual in-laid Cu interconnect structures is imperative to make process and design changes for achieving stringent reliability requirements in next technology generation interconnects. Electromigration-induced void evolution mechanisms in dual in-laid Cu interconnect structures having different geometries such as upper/lower layer and interconnect tree were studied by in-situ SEM and Monte Carlo simulation. In-situ SEM studies on various dual in-laid interconnect structures showed void migration and agglomeration along the Cu/cap interface in case of Cu/SiN x capped structures. Although the principle mechanism of void migration along the Cu/cap interface was the same in all structures, the subsequent void agglomeration location and void shape evolution at the cathode region was dependent on the structural differences with respect to Cu/cap interface for several geometries. A phenomenological model assisted by Monte Carlo simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration was proposed to explain qualitatively the electromigration-induced void evolution observed during in-situ SEM as well as in various other reported studies. The mechanism of electromigration-induced void evolution in several dual in-laid Cu interconnect structures as well as their behavior during conventional package-level electromigration tests can be clearly discerned based on in-situ SEM investigations and the proposed model.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2006, AMC 2006
Pages435-443
Number of pages9
StatePublished - 1 Dec 2006
Event23rd Annual Advanced Metallization Conference, AMC 2006 - San Diego, CA, United States
Duration: 17 Oct 200619 Oct 2006

Publication series

NameAdvanced Metallization Conference (AMC)
Volume2006
ISSN (Print)1540-1766

Conference

Conference23rd Annual Advanced Metallization Conference, AMC 2006
CountryUnited States
CitySan Diego, CA
Period17/10/0619/10/06

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