In situ resistivity measurement of cobalt silicide formation

G. Ottaviani*, King-Ning Tu, P. Psaras, C. Nobili

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x-ray diffraction and Rutherford backscattering spectrometry. Formation of Co2Si, CoSi, and CoSi2 were observed. Interfacial reaction to form Co2Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi2 forms at about 550 °C. In the case of excess cobalt, Co2Si forms first and is followed by a cobalt-rich solid solution. Co3Si silicide was not observed.

Original languageEnglish
Pages (from-to)2290-2294
Number of pages5
JournalJournal of Applied Physics
Volume62
Issue number6
DOIs
StatePublished - 1 Dec 1987

Fingerprint Dive into the research topics of 'In situ resistivity measurement of cobalt silicide formation'. Together they form a unique fingerprint.

Cite this