In-situ resist temperature monitor during hot embossing lithography by fluorescence probe technique

Fu-Hsiang Ko*, Hsin Yen Hwang, Mei Fen Chen, Li Yu Weng, Chu Jung Ko, Hsuen Li Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A fluorescence probe method was used to record the highest temperature in resist deformation processes. The fluorescence temperature measurement is a rapid, high precision, high accuracy, and a robust method. To calibrate the temperature measurement for a long heating time, the mixed resist was heated continuously up to 9 hrs. The method was found to be applicable to the in-situ temperature variation inspection on whole wafer but also helpful in investigating the resist deformation processes during embossing processes.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages136-137
Number of pages2
DOIs
StatePublished - 1 Dec 2004
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 26 Oct 200429 Oct 2004

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period26/10/0429/10/04

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    Ko, F-H., Hwang, H. Y., Chen, M. F., Weng, L. Y., Ko, C. J., & Chen, H. L. (2004). In-situ resist temperature monitor during hot embossing lithography by fluorescence probe technique. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 136-137). (Digest of Papers - Microprocesses and Nanotechnology 2004). https://doi.org/10.1109/IMNC.2004.245761