In-situ observation of meta-induced crystallization of amorphous Si 0.8Ge0.2 thin films

C. H. Yu*, Wen-Wei Wu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Polycrystalline SiGe (Poly-SiGe) thin films are of interest for the fabrication of thin film transistors in optoelectronic devices. The crystallization of a-Si0.8Ge0.2 thin films induced by Ni was investigated by in-situ transmission electron microscopy. For the Ni-induced crystallization, NiSi2 precipitates were first formed then migrated along a straight line in a-Si0.8Ge0.2. The crystallization of a-Si0.8Ge0.2 was induced along the path. The reversal of the growth direction of the needle-like crystallites was also observed. It appeared that the NiSi2 precipitates migrated along the interface of the crystallized and amorphous regions. The results are different from the branching needle-like structure for Ni-induced crystallization of a-Si.

Original languageEnglish
Pages569-574
Number of pages6
StatePublished - 1 Dec 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

Fingerprint Dive into the research topics of 'In-situ observation of meta-induced crystallization of amorphous Si <sub>0.8</sub>Ge<sub>0.2</sub> thin films'. Together they form a unique fingerprint.

Cite this