Polycrystalline SiGe (Poly-SiGe) thin films are of interest for the fabrication of thin film transistors in optoelectronic devices. The crystallization of a-Si0.8Ge0.2 thin films induced by Ni was investigated by in-situ transmission electron microscopy. For the Ni-induced crystallization, NiSi2 precipitates were first formed then migrated along a straight line in a-Si0.8Ge0.2. The crystallization of a-Si0.8Ge0.2 was induced along the path. The reversal of the growth direction of the needle-like crystallites was also observed. It appeared that the NiSi2 precipitates migrated along the interface of the crystallized and amorphous regions. The results are different from the branching needle-like structure for Ni-induced crystallization of a-Si.
|Number of pages||6|
|State||Published - 1 Dec 2005|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 16 May 2005 → 20 May 2005
|Conference||207th ECS Meeting|
|Period||16/05/05 → 20/05/05|