In-situ microscopic study of Cu intragranular electromigration

K. C. Chen*, C. N. Liao, Wen-Wei Wu, L. J. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electromigration (EM) in unpassivated copper lines at room temperature has been investigated in ultra-high vacuum by in-situ transmission electron microscopy (TEM), The electric current induced atomic migration in a (211)-oriemed Cu grain has been successfully recorded in real-lime video. The atomic image of the (211) grain was found to vanish directionally when applying an electric current density of 2 × 106 A/cm2 through the Cu line. The results suggested that the combination of {111} planes and 〈110〉 directions to be the easiest EM path in crystalline copper. By performing selective area diffraction (SAD) analysis on a single Cu grain with (111) crystal orientation, some unusual electron diffraction patterns appeared after passing an electric current through the Cu line. It is believed that the EM-induced Cu twinning may be held responsible for the unique diffraction patterns.

Original languageEnglish
Title of host publicationIn Situ Electron Microscopy of Materials
Pages74-79
Number of pages6
DOIs
StatePublished - 1 Dec 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume907
ISSN (Print)0272-9172

Conference

Conference2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period28/11/052/12/05

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    Chen, K. C., Liao, C. N., Wu, W-W., & Chen, L. J. (2005). In-situ microscopic study of Cu intragranular electromigration. In In Situ Electron Microscopy of Materials (pp. 74-79). (Materials Research Society Symposium Proceedings; Vol. 907). https://doi.org/10.1557/PROC-0907-MM13-04