In-situ microscopic study of Cu intragranular electromigration

K. C. Chen*, C. N. Liao, Wen-Wei Wu, L. J. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Electromigration (EM) in unpassivated copper lines at room temperature has been investigated in ultra-high vacuum by in-situ transmission electron microscopy (TEM), The electric current induced atomic migration in a (211)-oriemed Cu grain has been successfully recorded in real-lime video. The atomic image of the (211) grain was found to vanish directionally when applying an electric current density of 2 × 106 A/cm2 through the Cu line. The results suggested that the combination of {111} planes and 〈110〉 directions to be the easiest EM path in crystalline copper. By performing selective area diffraction (SAD) analysis on a single Cu grain with (111) crystal orientation, some unusual electron diffraction patterns appeared after passing an electric current through the Cu line. It is believed that the EM-induced Cu twinning may be held responsible for the unique diffraction patterns.

Original languageEnglish
Title of host publicationIn Situ Electron Microscopy of Materials
Number of pages6
StatePublished - 1 Dec 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA

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