In Situ Investigation of Defect-Free Copper Nanowire Growth

Ting Yi Lin, Yong Long Chen, Chia Fu Chang, Guan Min Huang, Chun Wei Huang, Cheng Yu Hsieh, Yu-Chieh Lo, Kuo Chang Lu, Wen-Wei Wu*, Lih Juann Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations


The fabrication and placement of high purity nanometals, such as one-dimensional copper (Cu) nanowires, for interconnection in integrated devices have been among the most important technological developments in recent years. Structural stability and oxidation prevention have been the key issues, and the defect control in Cu nanowire growth has been found to be important. Here, we report the synthesis of defect-free single-crystalline Cu nanowires by controlling the surface-assisted heterogeneous nucleation of Cu atomic layering on the graphite-like loop of an amorphous carbon (a-C) lacey film surface. Without a metal-catalyst or induced defects, the high quality Cu nanowires formed with high aspect ratio and high growth rate of 578 nm/s. The dynamic study of the growth of heterogeneous nanowires was conducted in situ with a high-resolution transmission electron microscope. The study illuminates the new mechanism by heterogeneous nucleation control and laying the groundwork for better understanding of heterosurface-assisted nucleation of defect-free Cu nanowire on a-C lacey film.

Original languageEnglish
Pages (from-to)778-784
Number of pages7
JournalNano Letters
Issue number2
StatePublished - 14 Feb 2018


  • Cu nanowires
  • Defect-free
  • a-C lacey film
  • heterosurface-assisted nucleation
  • in situ TEM

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    Lin, T. Y., Chen, Y. L., Chang, C. F., Huang, G. M., Huang, C. W., Hsieh, C. Y., Lo, Y-C., Lu, K. C., Wu, W-W., & Chen, L. J. (2018). In Situ Investigation of Defect-Free Copper Nanowire Growth. Nano Letters, 18(2), 778-784.