In-situ doping of erbium in hydrogenated amorphous carbon by low temperature metalorganic radio frequency plasma enhanced chemical vapor deposition

Hui Lin Hsu*, Keith R. Leong, Michael Halamicek, I. Ju Teng, Pratish Mahtani, Jenh-Yih Juang, Sheng Rui Jian, Li Qian, Nazir P. Kherani

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A significant improvement in the photoluminescence of erbium doped amorphous carbon (a-C:H(Er)) is reported. The effects of the RF power on the anode and cathode a-C:H films were investigated in terms of the microstructural and local bonding features. It was determined that Er doped a-C:H films should be placed on the anode to obtain wider bandgap and lower percentage of sp2 carbon bonding. The metalorganic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) Erbium(+ III) or Er(fod)3, was incorporated in-situ into an a-C:H host by metalorganic rf plasma enhanced chemical vapor deposition. This technique provides the capability of doping Er in a vertically uniform profile. The high erbium concentration (3.9 at.%), partial fluorination of the surrounding ligands, and the large optical bandgap of the host a-C:H are the primary factors that enable enhancement of the photoluminescence.

Original languageEnglish
Pages (from-to)429-435
Number of pages7
JournalThin Solid Films
Volume570
Issue numberPB
DOIs
StatePublished - 3 Nov 2014

Keywords

  • Erbium metalorganic compound
  • Fluorination
  • Hydrogenated amorphous carbon (a-C:H)

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