In-plane gate transistors for photodetector applications

Yu An Liao, Wei Hsun Lin, Yi Kai Chao, Wen-Hao Chang, Jen Inn Chyi, Shih Yen Lin

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

In-plane gate transistors (IPGTs) with 20-μrm m channel widths are fabricated on samples with n-(InGa)As sheet resistance embedded in undoped GaAs matrix. A trade-off between effective current modulation and high saturation drain current is obtained by optimizing the doping density of the sheet resistance. The mechanism responsible for the transistor behaviors of the devices is due to the channel electron depletion related to the population of mobile surface electrons under different gate biases. The photocurrent measurements demonstrate that the IPGT architecture is a feasible approach for the applications of photodetectors.

Original languageEnglish
Article number6517908
Pages (from-to)780-782
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
StatePublished - 3 Jun 2013

Keywords

  • Detectors
  • in-plane gate transistors (IPGTs)

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  • Cite this

    Liao, Y. A., Lin, W. H., Chao, Y. K., Chang, W-H., Chyi, J. I., & Lin, S. Y. (2013). In-plane gate transistors for photodetector applications. IEEE Electron Device Letters, 34(6), 780-782. [6517908]. https://doi.org/10.1109/LED.2013.2258456