In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides

Y. Liu*, Chi Wai Chow, W. Y. Cheung, H. K. Tsang

*Corresponding author for this work

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at below-bandgap wavelengths (1440-1590 nm) which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted samples which were annealed at 200°C, 300°C, or 350°C for different durations. Optical absorption and photodetector current measurements were performed for each sample. The ICPM can provide the same function as a waveguide tap coupler and a hybrid-integrated conventional photodiode.

Original languageEnglish
Pages (from-to)1882-1884
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number17
DOIs
StatePublished - 1 Sep 2006

Keywords

  • Helium ion implantation
  • In-line power monitor
  • Silicon waveguide

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