In depth thermal analysis of packaged GaN on Si power devices

Chieh An Wang, Hsin Ping Chou, Stone Cheng, Po Chien Chou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap (3.4eV), high breakdown voltage, large critical electric field, high carrier mobility, and the inherent high speed characteristics. With the high power densities that AlGaN/GaN HEMTs are capable of reaching, heat dissipation is a crucial issue. This paper presents the thermal analysis of packaging development, the device is attached on a V-groove copper base, and mounted on TO-3P leadframe to enhance Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device performance as well as thermal resistance were studied. In addition, micro-Raman/Infrared (IR) thermography was used to investigate temperature profiles and hot spot of the devices. Simulations provide key insights into device operation and the thermal mechanisms that affect reliability. After incorporating self-heating effect in calculations of current-voltage characteristics, our results agreed well with experimental data.

Original languageEnglish
Title of host publication2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages101-104
Number of pages4
ISBN (Print)9781467351348
DOIs
StatePublished - 1 Jan 2013
Event2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, Japan
Duration: 26 May 201330 May 2013

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
CountryJapan
CityKanazawa
Period26/05/1330/05/13

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