The radio-frequency (RF) figures of merit of 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology are investigated by evaluating the unity-current-gain cutoff frequency (F t) and maximum oscillation frequency (F max). The device fabricated with an added deep n-well structure is shown to greatly enhance both the cutoff frequency and the maximum oscillation frequency, with negligible de disturbance. Specifically, 18% increase in F t and 25% increase in F max are achieved. Since the deep n-well implant can be easily adopted in a standard CMOS process, the approach appears to be very promising for future CMOS RF applications.
- Deep n-well
- Maximum oscillation frequency
- Unity-current-gain cutoff frequency