Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers

S. H. Lin; H. J. Yang; W. B. Chen; F. S. Yeh; Sean P. McAlister; Albert Chin

doi:10.1109/TED.2008.924435

Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers

S. H. Lin^*, H. J. Yang, W. B. Chen, F. S. Yeh, Sean P. McAlister, Albert Chin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have studied the performance of double-quantum-barrier [TaN - Ir ₃ Si] - [HfAlO - LaAlO ₃ ] - Hf _0.3 N _0.2 O _0.5 - [HfAlO - SiO ₂ -Si charge-trapping memory devices. These devices display good characteristics in terms of their ±9-V program/erase (P/E) voltage, 100-μs P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 °C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.

Original language	English
Pages (from-to)	1708-1713
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TED.2008.924435
State	Published - 1 Jul 2008

Keywords

Erase
High-k
Nonvolatile memory
Program

Access to Document

10.1109/TED.2008.924435

Fingerprint Dive into the research topics of 'Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers'. Together they form a unique fingerprint.

Cite this

@article{86eeb06ccd6045edb02248f49fe3a3ab,

title = "Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers",

abstract = " We have studied the performance of double-quantum-barrier [TaN - Ir 3 Si] - [HfAlO - LaAlO 3 ] - Hf 0.3 N 0.2 O 0.5 - [HfAlO - SiO 2 -Si charge-trapping memory devices. These devices display good characteristics in terms of their ±9-V program/erase (P/E) voltage, 100-μs P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 °C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.",

keywords = "Erase, High-k, Nonvolatile memory, Program",

author = "Lin, {S. H.} and Yang, {H. J.} and Chen, {W. B.} and Yeh, {F. S.} and McAlister, {Sean P.} and Albert Chin",

year = "2008",

month = jul,

day = "1",

doi = "10.1109/TED.2008.924435",

language = "English",

volume = "55",

pages = "1708--1713",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "7",

}

TY - JOUR

T1 - Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers

AU - Lin, S. H.

AU - Yang, H. J.

AU - Chen, W. B.

AU - Yeh, F. S.

AU - McAlister, Sean P.

AU - Chin, Albert

PY - 2008/7/1

Y1 - 2008/7/1

N2 - We have studied the performance of double-quantum-barrier [TaN - Ir 3 Si] - [HfAlO - LaAlO 3 ] - Hf 0.3 N 0.2 O 0.5 - [HfAlO - SiO 2 -Si charge-trapping memory devices. These devices display good characteristics in terms of their ±9-V program/erase (P/E) voltage, 100-μs P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 °C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.

AB - We have studied the performance of double-quantum-barrier [TaN - Ir 3 Si] - [HfAlO - LaAlO 3 ] - Hf 0.3 N 0.2 O 0.5 - [HfAlO - SiO 2 -Si charge-trapping memory devices. These devices display good characteristics in terms of their ±9-V program/erase (P/E) voltage, 100-μs P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 °C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.

KW - Erase

KW - High-k

KW - Nonvolatile memory

KW - Program

UR - http://www.scopus.com/inward/record.url?scp=46649088331&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.924435

DO - 10.1109/TED.2008.924435

M3 - Article

AN - SCOPUS:46649088331

VL - 55

SP - 1708

EP - 1713

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 7

ER -