Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Chin I. Kuan, Horng-Chih Lin*, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.

Original languageEnglish
Article number7934028
Pages (from-to)2849-2853
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number7
DOIs
StatePublished - 1 Jul 2017

Keywords

  • Oxide semiconductors
  • ZnO
  • ZnON
  • series source/drain (S/D) resistance
  • thin-film transistors (TFTs)

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