Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Sung Wen Huang Chen, De Ren Yang, Neng Jie You, Wen Chieh Ho, Jerry Tzou, Hao Chung Kuo, Jia Min Shieh

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of <formula><tex>$1.98 {\text{m}\Omega-\text{cm}^{2}$</tex></formula>. The GaN epi-layer was etched as the multi-fins-structure with optimized bevel angle. The fins structure enable to improve the breakdown voltage by means of the uniformed electric field distribution. Afterwards, the GaN fins were capped by atomic layer deposition (ALD)-grown AlN film. The AlN served as a tunneling-barrier layer, which not only passivated thee GaN surface but also improved the turn-on voltage. The AlN-capped SBD shows a turn-on voltage at 0.18 V. Furthermore, the temperature-dependent transfer characteristics suggest the different current tunneling mechanisms at low and high electric field conditions, respectively. The time-dependent dielectric breakdown (TDDB) measurement suggests the surface traps were well passivated by ALD-AlN, which implies that the AlN cap-layer enables to improve the device reliability.

Original languageEnglish
JournalIEEE Transactions on Nanotechnology
DOIs
StateAccepted/In press - 2020

Keywords

  • ALD
  • AlN
  • Aluminum nitride
  • Electric fields
  • Gallium nitride
  • GaN
  • GaN substrate
  • III-V semiconductor materials
  • Schottky barrier diode (SBD)
  • Schottky barriers
  • Temperature measurement
  • Tunneling
  • tunneling barrier layer
  • vertical diode

Fingerprint Dive into the research topics of 'Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure'. Together they form a unique fingerprint.

Cite this