Improving the electrical properties of NILC poly-Si films using gettering α-Si film through contact holes

Chen-Ming Hu*, Yu Cheng Chao, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, often leads to trap Ni and NiSi 2 precipitates, which degrade the device performance. In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer. It was found that the GETR-TFT exhibited an enhanced field-effect mobility, steeper subthreshold swing, lower minimum leakage current. These improvements are consistent with a measured reduction in the trap state density in the channel.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages207-210
Number of pages4
Edition9
DOIs
StatePublished - 1 Dec 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0816/10/08

Fingerprint Dive into the research topics of 'Improving the electrical properties of NILC poly-Si films using gettering α-Si film through contact holes'. Together they form a unique fingerprint.

Cite this