Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, often leads to trap Ni and NiSi
precipitates, which degrade the device performance. In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer. It was found that the GETR-TFT exhibited an enhanced field-effect mobility, steeper subthreshold swing, lower minimum leakage current. These improvements are consistent with a measured reduction in the trap state density in the channel.