Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Malkundi Puttaveerappa Vijay Kumar, Chia Ying Hu, Amey Mahadev Walke, Kuo Hsing Kao*, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This paper investigates the impacts of typical semiconductor material properties-electron affinity, bandgap, and dielectric constant, on the electrical performance of a p-type core-shell heterojunction nanowire FET by numerical simulations. At the heterojunction, a valence band offset of 200 meV forms a sufficient energy barrier confining the holes in the quantum well, resulting in the optimal OFF-state current. A higher dielectric constant of the shell region is found to be able to decrease the leakage current of the device. The optimum conditions from the parameter analysis are demonstrated by a realistic and achievable material combination of Si/SiGe for the core-shell configuration. This paper provides physical insights into the materialwise impacts for designing the proposed transistor showing the reduced OFF-current and a better subthreshold swing for low-power applications.

Original languageEnglish
Article number7990547
Pages (from-to)3563-3568
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number9
DOIs
StatePublished - 1 Sep 2017

Keywords

  • Heterostructure confinement
  • quantum well (QW)
  • shell doping profile (SDP)

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